Modules
MG15G6EL1
Toshiba IGBT Power Module

Detail

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 600

Maximum collector-emitter voltage |Uce|, V: 600

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 15

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF: 400

Forward current transfer ratio (hFE), min: 100

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